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National Semiconductor & SST Announce Embedded Flash and Foundry Agreement |
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Company: |
National Semiconductor |
Category: |
Other |
Date: |
11-April-2000 |
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SUNNYVALE, Calif., April 11, 2000 —SST (Silicon Storage Technology, Inc., NASDAQ: SSTI), and
National Semiconductor Corporation (NYSE: NSM), today announced that the two companies have entered into a technology licensing agreement for
flash memory. The companies described the agreement as supporting SST's strategy to become the leading embedded flash memory supplier as well as enhancing National Semiconductor's focus on highly integrated solutions for analog applications and Information Appliances. Under terms of the agreement, National will license SST's patented 0.25µ SuperFlash® memory technology for use in its embedded applications. In addition to receiving fee and royalty revenue for the technology license, SST will also gain access to National’s state-of-the-art 200 mm wafer fab in South Portland, Maine. "As the demand for our SuperFlash technology continues to escalate, SST remains committed to partnering with world class manufacturers such as National Semiconductor in order to ensure fab access and ample wafer capacity for our products," said Bing Yeh, president and CEO of SST. "National's South Portland facility offers the benefits of a U.S.-based operation as well as cutting-edge 200 mm wafer manufacturing. This is a key addition to our strategy and further strengthens our position as the leading embedded flash technology company." National presently uses SST’s SuperFlash technology in its 16-bit CompactRISC Flash Microcontroller products manufactured at Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC). In order to further increase embedded flash memory capacity and expand its product offering, National has now entered into this licensing agreement with SST to add the SuperFlash technology to its own South Portland, Maine fab. In the first year of production at the South Portland, Maine fab, SST will have access to more than 60,000 200 mm wafers.
This fab is also capable of manufacturing 0.18µ and 0.15µ products,
allowing for future SuperFlash devices in finer process geometries. |
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